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AL5801
Package Thermal Data
Characteristic
Power Dissipation (Note 5) @ T A = +25°C
Power Dissipation (Note 6) @ T A = +25°C
Power Dissipation (Note 7) @ T A = +25°C
Power Dissipation (Note 8) @ T A = +25°C
Thermal Resistance, Junction to Ambient Air (Note 5) @ T A = +25°C
Thermal Resistance, Junction to Ambient Air (Note 6) @ T A = +25°C
Thermal Resistance, Junction to Ambient Air (Note 7) @ T A = +25°C
Thermal Resistance, Junction to Ambient Air (Note 8) @ T A = +25°C
Notes:
5. Device mounted on 15mm x 15mm 2oz copper board.
Symbol
P D
R θ JA
Value
0.75
0.70
0.85
1.05
165
180
145
120
Unit
W
°C/W
6. Device mounted on 25mm x 25mm 1oz copper board.
7. Device mounted on 25mm x 25mm 2oz copper board.
8. Device mounted on 50mm x 50mm 2oz copper board.
Recommended Operating Conditions (@T A = +25°C, unless otherwise specified.)
Symbol
V BIAS
V OUT
I LED
T A
Parameter
Supply voltage range
OUT voltage range
LED pin current (Note 9)
Operating ambient temperature range
Min
3.5
1.1
25
-40
Max
20
100
350
125
Unit
V
mA
°C
Note:
9. Subject to ambient temperature, power dissipation and PCB.
NMOSFET Electrical Characteristics: (Q1) (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
100
?
?
?
?
?
?
1
± 100
V
μA
nA
V GS = 0V, I D = 250μA
V DS = 60V, V GS = 0V
V GS = ± 20V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
V GS(th)
R DS (ON)
g fs
V SD
2.0
?
?
?
?
?
?
0.9
0.89
4.1
0.85
0.99
?
1.1
V
Ω
S
V
V DS = V GS , I D = 250μA
V GS = 10V, I D = 1.5A
V GS = 6V, I D = 1A
V DS = 15V, I D = 1A
V GS = 0V, I S = 1.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
129
?
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
?
?
14
8
?
?
pF
pF
V DS = 50V, V GS = 0V
f = 1.0MHz
AL5801
Document number: DS35555 Rev. 3 - 2
3 of 11
www.diodes.com
July 2012
? Diodes Incorporated
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